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DATA SHEET
TEA1099H Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
Product specification Supersedes data of 1998 Jun 11 File under Integrated Circuits, IC03 1999 Apr 08
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
FEATURES Line interface * Low DC line voltage * Voltage regulator with adjustable DC voltage * Symmetrical high impedance inputs (70 k) for dynamic, magnetic or electret microphones * Dual Tone Multi-Frequency (DTMF) input with confidence tone on earphone and/or loudspeaker * Receive amplifier for dynamic, magnetic or piezo-electric earpieces (with externally adjustable gain) * AGC: Automatic Gain Control for true line loss compensation. Supplies * Provides a strong 3.35 V regulated supply for microcontroller or dialler * Provides filtered power supply, optimized according to line current and compatible with external voltage or current sources * Filtered 2.0 V power supply output for electret microphone * Compatible with a ringer mode * Power-Down (PD) logic input for power-down. Handsfree * Asymmetrical high-impedance input for electret microphone * Loudspeaker amplifier with single-ended rail-to-rail output and externally adjustable gain * Dynamic limiter on loudspeaker amplifier to prevent distortion * Logarithmic volume control on loudspeaker amplifier via linear potentiometer * Duplex controller consisting of: - Signal and noise envelope monitors for both channels (with adjustable sensitivities and timing) - Decision logic (with adjustable switch-over and Idle mode timing) - Voice switch control (with adjustable switching range and constant sum of gain during switching). Auxiliary interfaces
TEA1099H
* General auxiliary output for transmit and receive purposes * Auxiliary transmit input with high signal level capability dedicated to line transmission * Auxiliary receive input with high signal level capability * Integrated multiplexer for channels selection. APPLICATIONS * Line powered telephone sets * Cordless telephones * Fax machines * Answering machines. GENERAL DESCRIPTION The TEA1099H is an analog bipolar circuit dedicated for telephone applications. It includes a line interface, handset (HS) microphone and earpiece amplifiers, handsfree (HF) microphone and loudspeaker amplifiers, some specific auxiliary Inputs/Outputs (I/Os) and an analog multiplexer to enable the right transmit and/or receive channels. The multiplexer is controlled by a logic circuit which decodes four logic inputs provided by a microcontroller. Thirteen different application modes have been defined and can be accessed by selecting the right logic inputs. An application mode is a special combination of transmit and receive channels required by telephone applications. This IC can be supplied by the line and/or by the mains if available (in a cordless telephone or an answering machine for example). It provides a 3.35 V supply for a microcontroller or dialler and a 2.0 V filtered voltage supply for an electret microphone. The IC is designed to facilitate the use of the loudspeaker amplifier during ringing phase.
1999 Apr 08
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Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
TEA1099H
QUICK REFERENCE DATA Iline = 15 mA; RSLPE = 20 ; Zline = 600 ; f = 1 kHz; Tamb = 25 C; AGC pin connected to LN; PD = HIGH; HFC = LOW; AUXC = LOW; MUTT = HIGH; MUTR = HIGH; measured according to test circuits; unless otherwise specified. SYMBOL Iline VSLPE VBB VDD VESI IESI(ext) IBB IBB(pd) Gv(MIC-LN) Gv(IR-RECO) Gv(QR) PARAMETER line current operating range stabilized voltage between SLPE and GND (Vref) regulated supply voltage for internal circuitry regulated supply voltage on pin VDD external voltage supply allowed on pin ESI external current supply allowed on pin ESI current available on pin VBB current consumption on VBB during power-down phase voltage gain from pin MIC+/MIC- to LN voltage gain from pin IR (referenced to LN) to RECO gain voltage range between pins RECO and QR VTXIN = 3 mV (RMS); RGATX = 30.1 k VHFTX = 15 mV (RMS) VHFRX = 20 mV (RMS); RGALS = 255 k with RSWR referenced to 365 k speech mode handsfree mode PD = LOW VMIC = 5 mV (RMS) VIR = 15 mV (RMS) CONDITIONS normal operation with reduced performance Iline = 15 mA Iline = 70 mA Iline = 15 mA Iline = 70 mA otherwise MIN. 11 1 3.4 5.7 2.75 4.9 - - - - - - 43.3 28.7 -3 12.7 33.5 25.5 - -40 5.45 - - 3.7 6.1 3.0 5.3 3.35 - - 11 9 460 44.3 29.7 - 15.2 34.7 28 40 - 6.45 TYP. MAX. 140 11 4.0 6.5 3.25 5.7 3.6 6 140 - - - 45.3 30.7 +15 17.7 35.9 30.5 - +12 7.45 UNIT mA mA V V V V V V V mA mA mA A dB dB dB dB dB dB dB dB dB
VBB > 3.35 V + 0.25 V (typ) 3.1
VBB - 0.25 -
Gv(TXIN-TXOUT) voltage gain from pin TXIN to TXOUT Gv(HFTX-LN) voltage gain from pin HFTX to LN Gv(HFRX-LSAO) voltage gain from pin HFRX to LSAO SWRA SWRA Gv(trx) switching range switching range adjustment
gain control range for transmit and Iline = 70 mA; on receive amplifiers affected by the Gv(MIC-LN), Gv(IR-RECO) and AGC; with respect to Iline = 15 mA Gv(IR-AUXO)
ORDERING INFORMATION TYPE NUMBER TEA1099H PACKAGE NAME QFP44 DESCRIPTION plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm VERSION SOT307-2
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Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
BLOCK DIAGRAM
handbook, full pagewidth
LN 15 REG 16 STARTER SLPE 14
TEA1099H
10 9 LINE CURRENT DETECTION LOW VOLTAGE BEHAVIOUR 19 SWITCH D6 SUPPLY MANAGEMENT 20
VBB ESI VDD MICS
AGC
18
AGC POWER-DOWN CURRENT SOURCES 38 PD
GND
13
Tail currents for preamps
HFTX
36 37 ANALOG MULTIPLEXER CONTROL 39 40 41 HFC MUTT MUTR AUXC
TXAUX
43
DTMF
32
ATT.
TEA1099H
MIC+ MIC-
31 30
27
GATX
26 TXIN 28 29
TXOUT GNDTX
24 25 TSEN TENV TNOI RNOI RENV RSEN 4 3 2 5 7 6 TX AND RX ENVELOPE AND NOISE DETECTORS BUFFERS AND COMPARATORS DUCO LOGIC SWT STATUS VOICE SWITCH 21 22
SWT IDT STAB SWR
VOLUME CONTROL
23
VOL
GALS LSAO
11 12
1
HFRX
DLC
8
DYNAMIC LIMITER
AUXO
44
17
IR
RECO GARX QR
35 34 33 42 RAUX ATT.
MGM296
Fig.1 Block diagram.
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Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
PINNING SYMBOL HFRX PIN 1 DESCRIPTION receive input for loudspeaker amplifier or auxiliary receive amplifier transmit noise envelope timing adjustment transmit signal envelope timing adjustment transmit signal envelope sensitivity adjustment receive noise envelope timing adjustment receive signal envelope sensitivity adjustment receive signal envelope timing adjustment dynamic limiter capacitor for the loudspeaker amplifier external supply input stabilized supply for internal circuitry loudspeaker amplifier gain adjustment loudspeaker amplifier output ground reference line current sense positive line terminal line voltage regulator decoupling receive amplifier input automatic gain control/line loss compensation 3.35 V regulated voltage supply for the microcontroller SYMBOL MICS STAB SWR VOL SWT IDT TXOUT GATX TXIN GNDTX MIC- MIC+ DTMF QR GARX RECO HFTX HFC PD MUTT MUTR AUXC RAUX TXAUX AUXO PIN 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44
TEA1099H
DESCRIPTION microphone supply output reference current adjustment switching range adjustment loudspeaker volume adjustment switch-over timing adjustment Idle mode timing adjustment HF microphone amplifier output HF microphone amplifier gain adjustment HF microphone amplifier input ground reference for microphone amplifiers negative HS microphone amplifier input positive HS microphone amplifier input dual tone multi-frequency input earpiece amplifier output earpiece amplifier gain adjustment receive amplifier output transmit input for line amplifier or auxiliary receive amplifier logic input power-down input (active LOW) logic input (active LOW) logic input (active LOW) logic input auxiliary receive amplifier input auxiliary transmit amplifier input auxiliary amplifier output
TNOI TENV TSEN RNOI RSEN RENV DLC ESI VBB GALS LSAO GND SLPE LN REG IR AGC VDD
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
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Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
TEA1099H
35 RECO
40 MUTR
34 GARX
44 AUXO
41 AUXC
42 RAUX
39 MUTT
36 HFTX
handbook, full pagewidth
43 TXAUX
37 HFC
38 PD
HFRX 1 TNOI 2 TENV 3 TSEN 4 RNOI 5 RSEN 6 RENV 7 DLC 8 ESI 9 VBB 10 GALS 11
33 QR 32 DTMF 31 MIC+ 30 MIC- 29 GNDTX
TEA1099H
28 TXIN 27 GATX 26 TXOUT 25 IDT 24 SWT 23 VOL
STAB 21
LSAO 12
GND 13
SLPE 14
MICS 20
SWR 22
LN 15
REG 16
IR 17
AGC 18
VDD 19
MGM297
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION All data given in this chapter are typical values, except when otherwise specified. Supplies LINE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE, REG AND VBB) The supply for the TEA1099H and its peripherals is obtained from the line. The IC generates a stabilized reference voltage (Vref) between pins SLPE and GND. This reference voltage is equal to 3.7 V for line currents lower than 18 mA. It than increases linearly with the line current and reaches the value of 6.1 V for line currents higher than 45 mA. For line currents below 9 mA, the internal reference voltage generating Vref is automatically adjusted to a lower value. This is the so-called low voltage area and the TEA1099H has limited performances in this area (see Section "Low voltage behaviour"). This reference voltage is temperature compensated.
The voltage between pins SLPE and REG is used by the internal regulator to generate the stabilized reference voltage and is decoupled by means of a capacitor between pins LN and REG. This capacitor converted into an equivalent inductance realizes the set impedance conversion from its DC value (RSLPE) to its AC value (done by an external impedance). The IC regulates the line voltage at pin LN and it can be calculated as follows: V LN = V ref + R SLPE x I SLPE I SLPE = I line - I where: Iline = line current Ix = current consumed on pin LN (approximately a few A) ISLPE = current flowing through the RSLPE resistor
x
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Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
The preferred value for RSLPE is 20 . Changing this value will affect more than the DC characteristics; it also influences the transmit gains to the line, the gain control characteristic, the sidetone level and the maximum output swing on the line. As can be seen from Fig.3, the internal circuitry is supplied by pin VBB, which is a strong supply point combined with the line interface. The line current is flowing through the RSLPE resistor and is sunk by the VBB voltage stabilizer, becoming available for a loudspeaker amplifier or any peripheral IC. Its voltage is equal to 3.0 V for line currents lower than 18 mA. It than increases linearly with the line current and reaches the value of 5.3 V for line currents greater than 45 mA. It is temperature compensated. See Fig.4 for the main DC voltages.
TEA1099H
The aim of the current switch TR1 and TR2 is to reduce distortion of large AC line signals. Current ISLPE is supplied to VBB via TR1 when the voltage on SLPE is greater than VBB + 0.25 V. When the voltage on SLPE is lower than this value, the current ISLPE is shunted to GND via TR2. The reference voltage Vref can be increased by connecting an external resistor between pins REG and SLPE. For large line currents, this increase can slightly affect some dynamic performances such as maximum signal level on the line for 2% Total Harmonic Distortion (THD). The voltage on pin VBB is not affected by this external resistor.
LN handbook, full pagewidth RSLPE 20 SLPE CREG 4.7 F E1 D1 J1 R3 REG R1 TR1
TR2 GND VBB E2
TP1
D1 TN2
R2 from preamp TN1 GND GND J2
MGM298
Fig.3 Line interface principle.
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Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
TEA1099H
handbook, full pagewidth
8
FCA049
LN
voltages (V) SLPE 6 VBB
4 VDD
2
MICS
0 0 0.01 0.02 0.03 0.04 0.05 0.06 Iline (A) 0.07
Fig.4 Main DC voltages.
EXTERNAL SUPPLY (PINS ESI AND VBB) The TEA1099H can be supplied by the line as well as by external power sources (voltage or current sources) that must be connected to pin ESI. The IC will choose which supply to use according to the voltage it can provide. A voltage supply on ESI is efficient only if its value is greater than the working voltage of the internal VBB voltage stabilizer. Otherwise the IC continues to be line powered. The current consumed on this source is at least equal to the internal consumption. It increases with the voltage difference between the value forced on ESI and the working voltage of the internal stabilizer. The excess current compared to the internal consumption becomes then available for other purposes such as supplying a loudspeaker amplifier. The voltage source should not exceed 6 V. If the value of the external voltage source can be lower than the working voltage of the internal stabilizer, an external diode is required to avoid reverse current flowing into the external power supply. In case of current source, the voltage on VBB and ESI depends on the current available. It is internally limited to 6.6 V. The current source should not exceed 140 mA.
VDD SUPPLY FOR MICROCONTROLLER (PIN VDD) The voltage on VDD supply point follows the voltage on VBB with a difference typically equal to 250 mV and is internally limited to 3.35 V. This voltage is temperature compensated. This supply point can provide a current up to 3 mA typically. Its internal consumption stays low (a few 10 nA) as long as VDD does not exceed 1.5 V (see Fig.5). An external voltage can be connected on VDD with limited extra consumption on VDD (typically 100 A). This voltage source should not be lower than 3.5 V or higher than 6 V. VBB and VDD can supply external circuits in the limit of currents provided either from the line or from ESI, taking into account the internal current consumption.
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Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
TEA1099H
10 8 handbook, full pagewidth IDD (pA) 10 7
FCA050
10 6
10 5
10 4
10 3
10 2
10 1.0
1.5
2.0
2.5
VDD (V)
3.0
Fig.5 Current consumption on VDD.
SUPPLY FOR MICROPHONE (PINS MICS AND GNDTX) The MICS output can be used as a supply for electret microphones. Its voltage is equal to 2.0 V; it can source current up to 1 mA and has an output impedance equal to 200 . LOW VOLTAGE BEHAVIOUR For line currents below 9 mA, the reference voltage is automatically adjusted to a lower value; the VBB voltage follows the SLPE voltage with 250 mV difference. The excess current available for other purposes than DC biasing of the IC becomes small. In this low voltage area, the IC has limited performances. When the VBB voltage reaches 2.7 V, the VBB detector of the receive dynamic limiter on LSAO acts and discharges the DLC capacitor. The loudspeaker is then automatically disabled below this DC voltage. When VBB becomes lower than 2.5 V, the TEA1099H is forced into a low voltage mode whatever the levels on the logic inputs are. It is a speech mode with reduced performances only enabling the microphone channel (between the MIC inputs and LN) and the earpiece amplifier.
These two channels are able to deliver signals for line currents as small as 3 mA. The HFC input is tied to GND sinking a current typically equal to 300 A. POWER-DOWN MODE (PINS PD AND AUXC) To reduce current consumption during dialling or register recall (flash), the TEA1099H is provided with a power-down input (PD). When the voltage on both pins PD and AUXC is LOW, the current consumption from VBB and VDD is reduced to 460 A typically. Therefore a capacitor of 470 F on VBB is sufficient to power the TEA1099H during pulse dialling or flash. The PD input has a pull-up structure, while AUXC has a pull-down structure. In this mode, the capacitor CREG is internally disconnected. RINGER MODE (PINS ESI, VBB, AUXC AND PD) The TEA1099H is designed to be activated during the ringing phase. The loudspeaker amplifier can be used for the ringing signal. The IC must be powered by an external supply on ESI, while applying a HIGH level on the logic input AUXC and a LOW level on PD input. Only the HFRX input and the LSAO output are activated, in order to limit the current consumption. Some dynamic limitation is provided to prevent the LSAO output from saturation and VBB from being discharged below 2.7 V.
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Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
Transmit channels (pins MIC+, MIC-, DTMF, TXAUX, HFTX and LN) HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC- AND LN) The TEA1099H has symmetrical microphone inputs. The input impedance between MIC+ and MIC- is 70 k (typ.). The voltage gain between pins MIC+/MIC- and LN is set to 44.3 dB. Without limitation from the output, the microphone input stage can accommodate signals up to 18 mV (RMS) at room temperature for 2% of THD. The microphone inputs are biased at one diode voltage. Automatic gain control is provided for line loss compensation. DTMF AMPLIFIER (PINS DTMF, LN AND RECO) The TEA1099H has an asymmetrical DTMF input. The input impedance between DTMF and GND is 20 k (typ.). The voltage gain between pins DTMF and LN is set to 25.35 dB. Without limitation from the output, the input stage can accommodate signals up to 180 mV (RMS) at room temperature for 2% of THD. When the DTMF amplifier is enabled, dialling tones may be sent on the line. These tones can be heard in the earpiece or in the loudspeaker at a low level. This is called the confidence tone. The voltage attenuation between pins DTMF and RECO is typically equal to -16.5 dB. The DC biasing of this input is 0 V. The automatic gain control has no effect on these channels. AUXILIARY TRANSMIT AMPLIFIER (PINS TXAUX AND LN) The TEA1099H has an asymmetrical auxiliary input TXAUX. The input impedance between TXAUX and GND is 20 k (typ.). The voltage gain between pins TXAUX and LN is set to 12.5 dB. Without limitation from the output, the input stage can accommodate signals up to 1.2 V (RMS) at room temperature for 2% of THD. The TXAUX input is biased at two diodes voltage. Automatic gain control is provided for line loss compensation.
TEA1099H
HANDSFREE TRANSMIT OUTPUT STAGE (PINS HFTX AND LN) The TEA1099H has an asymmetrical HFTX input, which is mainly intended for use in combination with the TXOUT output. The input impedance between HFTX and GND is 20 k (typ.). The voltage gain between pins HFTX and LN is set to 34.7 dB. Without limitation from the output, the input stage can accommodate signals up to 95 mV (RMS) at room temperature for 2% of THD. The HFTX input is biased at two diodes voltage. Automatic gain control is provided for line loss compensation. MICROPHONE MONITORING ON TXOUT (PINS MIC+, MIC- AND TXOUT) The voltage gain between the microphone inputs MIC+/MIC- and the output TXOUT is set to 49.8 dB. This channel gives an image of the signal sent on the line while speaking in the handset microphone. Using external circuitry, this signal can be used for several purposes such as sending dynamic limitation or anti-howling in a listening-in application. The TXOUT output is biased at two diodes voltage. The automatic gain control has no effect on these channels. Receive channels (pins IR, RAUX, RECO, GARX and QR) RX AMPLIFIER (PINS IR AND RECO) The receive amplifier has one input IR which is referred to the line. The input impedance between pins IR and LN is 20 k (typ.) and the DC biasing between these pins is equal to one diode voltage. The gain between pins IR (referred to LN) and RECO is typically equal to 29.7 dB. Without limitation from the output, the input stage can accommodate signals up to 50 mV (RMS) at room temperature for 2% of THD. This receive amplifier has a rail-to-rail output RECO, which is designed for use with high ohmic (real) loads (larger than 5 k). This output is biased at two diodes voltage. Automatic gain control is provided for line loss compensation.
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Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
EARPIECE AMPLIFIER (PINS GARX AND QR) The earpiece amplifier is an operational amplifier having its output (QR) and its inverting input (GARX) available. Its input signal comes, via a decoupling capacitor, from the receive RECO output. It is used in combination with two resistors to get the required gain or attenuation compared to the receive gain. It can be chosen between -3 and +15 dB. Two external capacitors CGAR (connected between GARX and QR) and CGARS (connected between GARX and GND) ensure stability. The CGAR capacitor provides a 1st-order low-pass filter. The cut-off frequency corresponds to the time constant CGAR x Re2. The relationship CGARS 10 x CGAR must be fulfilled. The earpiece amplifier has a rail-to-rail output QR, biased at two diodes voltage. It is designed for use with low ohmic (real) loads (150 ) or capacitive loads (100 nF in series with 100 ). AUXILIARY RECEIVE AMPLIFIER (PINS RAUX AND RECO) The auxiliary receive amplifier has an asymmetrical input RAUX; it uses the RECO output. Its input impedance between pins RAUX and GND is typically equal to 20 k. The voltage gain between pins RAUX and RECO is equal to -2.4 dB. Without any limitation from the output, the input stage can accommodate signals up to 0.95 V (RMS) at room temperature for 2% of THD. This auxiliary amplifier has a rail-to-rail output RECO, which is designed for use with high ohmic (real) loads (larger than 5 k). This output is biased at two diodes voltage. The automatic gain control has no effect on this channel. Auxiliary amplifiers using AUXO (pins MIC+, MIC-, HFTX, IR and AUXO) The TEA1099H has an auxiliary output AUXO, biased at two diodes voltage. This output stage is a rail-to-rail one, designed for use with high ohmic (real) loads (larger than 5 k). The AUXO output amplifier is used in three different channels, two transmit channels and one receive channel.
TEA1099H
AUXILIARY AMPLIFIERS USING THE MICROPHONE INPUTS (PINS MIC+, MIC- AND AUXO) The auxiliary transmit amplifier using the microphone MIC+ and MIC- inputs has a gain of 25.5 dB referenced to AUXO. Without limitation from the output, the input stage can accommodate signals up to 16 mV (RMS) at room temperature for 2% of THD. The automatic gain control has no effect on this channel. AUXILIARY AMPLIFIERS USING HFTX (PINS HFTX AND AUXO) The auxiliary transmit amplifier using the HFTX input has a gain of 15.2 dB referenced to AUXO. The automatic gain control has no effect on this channel. RX AMPLIFIER USING IR (PINS IR AND AUXO) The auxiliary receive amplifier uses pin IR as input. The input is referred to LN and the DC biasing between these two pins is one diode voltage. The voltage gain between the input IR (referenced to LN) and the output AUXO is typically equal to 32.8 dB, which compensates typically the attenuation provided by the anti-sidetone network. Automatic gain control is provided for line loss compensation. AGC (pin AGC) The TEA1099H performs automatic line loss compensation, which fits well with the true line attenuation. The automatic gain control varies the gain of some transmit and receive amplifiers in accordance with the DC line current. The control range is 6.45 dB for Gv(MIC-LN), Gv(IR-RECO) and Gv(IR-AUXO) and 6.8 dB for the other affected channels, which corresponds approximately to a line length of 5.5 km for a 0.5 mm twisted-pair copper cable. To enable this gain control, the AGC pin must be shorted to pin LN. The start current for compensation corresponds to a line current equal to typically 23 mA and the stop current to 57 mA. The start current can be increased by connecting an external resistor between pins AGC and LN. It can be increased up to 40 mA (using a resistor typically equal to 80 k). The start and stop current will be maintained in a ratio equal to 2.5. By leaving the AGC pin open-circuit, the gain control is disabled and no line loss compensation is performed.
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Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
Handsfree application As can be seen from Fig.3, a loop is formed via the sidetone network in the line interface part and the acoustic coupling between loudspeaker and microphone of the handsfree part. When this loop gain is greater than 1, howling occurs. In a full duplex application, this would be the case. The loop-gain has to be much lower than 1 and therefore has to be decreased to avoid howling. This is achieved by the duplex controller. The duplex controller of the TEA1099H detects which channel has the `largest' signal and then controls the gain of the microphone amplifier and the loudspeaker amplifier so that the sum of the gains remains constant. As a result, the circuit in this handsfree application can be in three stable modes: 1. Transmit mode (TX mode). The gain of the microphone amplifier is at its maximum and the gain of the loudspeaker amplifier is at its minimum. 2. Receive mode (RX mode). The gain of the loudspeaker amplifier is at its maximum and the gain of the microphone amplifier is at its minimum. 3. Idle mode. The gain of the amplifiers is halfway between their maximum and minimum value.
TEA1099H
The difference between the maximum gain and minimum gain is called the switching range. HANDSFREE MICROPHONE CHANNEL: PINS TXIN, GATX, TXOUT AND GNDTX (see Fig.7) The TEA1099H has an asymmetrical handsfree microphone input TXIN with an input resistance of 20 k. The DC biasing of the input is 0 V. The gain of the input stage varies according to the mode of the TEA1099H. In the transmit mode, the gain is at its maximum; in the receive mode, it is at its minimum and in the Idle mode it is halfway between maximum and minimum. Switch-over from one mode to the other is smooth and click-free. The output TXOUT is biased at two diodes voltage and has a current capability equal to 20 A (RMS). In the transmit mode, the overall gain of the microphone amplifier (from pins TXIN to TXOUT) can be adjusted from 0 up to 31 dB to suit specific application requirements. The gain is proportional to the value of RGATX and equals 15.2 dB with RGATX = 30.1 k. Without limitation from the output, the microphone input stage can accommodate signals up to 18 mV (RMS) at room temperature for 2% of THD.
handbook, full pagewidth
acoustic coupling
telephone line
HYBRID
DUPLEX CONTROL
sidetone
MGM299
Fig.6 Handsfree telephone set principles.
1999 Apr 08
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Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
TEA1099H
handbook, full pagewidth
GATX 27 VBB CMIC
RGATX
28 TXIN
V
I
I
V
TXOUT 26
RMIC to envelope detector from voice switch GNDTX 29
MGM300
Fig.7 Handsfree microphone channel.
LOUDSPEAKER CHANNEL
handbook, full pagewidth
RGALS
to logic 11 GALS VBB 12 LSAO V I
to/from voice switch
to envelope detector
CGALS CLSAO
I
V
HFRX 1
8 DLC CDLC
DYNAMIC LIMITER
VOLUME CONTROL
VOL 23 RVOL
MGM301
Fig.8 Loudspeaker channel.
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Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
Loudspeaker amplifier: pins HFRX, GALS and LSAO
The TEA1099H has an asymmetrical input for the loudspeaker amplifier with an input resistance of 20 k between pins HFRX and GND. It is biased at two diodes voltage. Without limitation from the output, the input stage can accommodate signals up to 580 mV (RMS) at room temperature for 2% of THD. The gain of the input stage varies according to the mode of the TEA1099H. In the receive mode, the gain is at its maximum; in the transmit mode, it is at its minimum and in the Idle mode, it is halfway between maximum and minimum. Switch-over from one mode to the other is smooth and click-free. The rail-to-rail output stage is designed to power a loudspeaker connected as a single-ended load (between pins LSAO and GND). In the receive mode, the overall gain of the loudspeaker amplifier can be adjusted from 0 up to 35 dB to suit specific application requirements. The gain from HFRX to LSAO is proportional to the value of RGALS and equals 28 dB with RGALS = 255 k. A capacitor connected in parallel with RGALS is recommended and provides a 1st-order low-pass filter.
TEA1099H
When the supply voltage drops below an internal threshold voltage of 2.7 V, the gain of the loudspeaker amplifier is rapidly reduced (approximately 1 ms). When the supply voltage exceeds 2.7 V, the gain of the loudspeaker amplifier is increased again. By forcing a level lower than 0.2 V on pin DLC, the loudspeaker amplifier is muted and the TEA1099H is automatically forced into the transmit mode.
RX amplifier using AUXO
In some cordless applications, the handset may be used to perform handsfree function (instead of the base). As the TEA1099H is in the base and the active loudspeaker is in the handset, a second receive output is required. The amplifier using HFRX as an input and AUXO as an output will be used for communication with the RF IC, sending information to the handset. It will be controlled by the duplex controller in the same way as the loudspeaker amplifier. The voltage gain between pins HFRX and AUXO is equal to 3.7 dB. The amplifier can manage the same input signal as the loudspeaker amplifier. It has a rail-to-rail output, biased by two diodes, designed for use with high ohmic (real) loads (larger than 5 k). The volume control and the dynamic limiter are not active on this channel. DUPLEX CONTROLLER
Volume control: pin VOL
The loudspeaker amplifier gain can be adjusted with the potentiometer RVOL. A linear potentiometer can be used to obtain logarithmic control of the gain at the loudspeaker amplifier. Each 1.9 k increase of RVOL results in a gain loss of 3 dB. The maximum gain reduction with the volume control is internally limited to the switching range.
Signal and noise envelope detectors: pins TSEN, TENV, TNOI, RSEN, RENV and RNOI
The signal envelopes are used to monitor the signal level strength in both channels. The noise envelopes are used to monitor background noise in both channels. The signal and noise envelopes provide inputs for the decision logic. The signal and noise envelope detectors are shown in Fig.9. For the transmit channel, the input signal at TXIN is 40 dB amplified to TSEN. For the receive channel, the input signal at HFRX is 0 dB amplified to RSEN. The signals from TSEN and RSEN are logarithmically compressed and buffered to TENV and RENV respectively. The sensitivity of the envelope detectors is set with RTSEN and RRSEN. The capacitors connected in series with the two resistors block any DC component and form a 1st-order high-pass filter. In the basic application (see Fig.16) it is assumed that VTXIN = 1 mV (RMS) and VHFRX = 100 mV (RMS) nominal and both RTSEN and RRSEN have a value of 10 k. With the value of CTSEN and CRSEN at 100 nF, the cut-off frequency is at 160 Hz.
Dynamic limiter: pin DLC
The dynamic limiter of the TEA1099H prevents clipping of the loudspeaker output stage and protects the operation of the circuit when the supply voltage at VBB falls below 2.7 V. Hard clipping of the loudspeaker output stage is prevented by rapidly reducing the gain when the output stage starts to saturate. The time in which gain reduction is effected (clipping attack time) is approximately a few milliseconds. The circuit stays in the reduced gain mode until the peaks of the loudspeaker signal no longer cause saturation. The gain of the loudspeaker amplifier then returns to its normal value within the clipping release time (typically 250 ms). Both attack and release times are proportional to the value of the capacitor CDLC. The total harmonic distortion of the loudspeaker output stage, in reduced gain mode, stays below 2% up to 10 dB (minimum) of input voltage overdrive [providing VHFRX is below 580 mV (RMS)].
1999 Apr 08
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Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
The buffer amplifiers which apply the compressed signals to TENV and RENV have a maximum source current of 120 A and a maximum sink current of 1 A. Together with the capacitor CTENV and CRENV, the timing of the signal envelope monitors can be set. In the basic application, the value of both capacitors is 470 nF. Because of the logarithmic compression, each 6 dB signal increase means 18 mV increase of the voltage on the envelopes TENV or RENV at room temperature. Thus, timings can be expressed in dB/ms. At room temperature, the 120 A sourced current corresponds to a maximum rise-slope of the signal envelope of 85 dB/ms. This is sufficient to track normal speech signals. The 1 A current sunk by TENV or RENV corresponds to a maximum fall-slope of 0.7 dB/ms. This is sufficient for a smooth envelope and also eliminates the effect of echoes on switching behaviour.
TEA1099H
To determine the noise level, the signals on TENV and RENV are buffered to TNOI and RNOI. These buffers have a maximum source current of 1 A and a maximum sink current of 120 A. Together with the capacitors CTNOI and CRNOI, the timings can be set. In the basic application (see Fig.16) the value of both capacitors is 4.7 F. At room temperature, the 1 A sourced current corresponds to a maximum rise-slope of the noise envelope of approximately 0.07 dB/ms. This is small enough to track background noise and not to be influenced by speech bursts. The 120 A current that is sunk corresponds to a maximum fall-slope of approximately 8.5 dB/ms. However, during the decrease of the signal envelope, the noise envelope tracks the signal envelope so it will never fall faster than approximately 0.7 dB/ms. The behaviour of the signal envelope and noise envelope monitors is illustrated in Fig.10.
handbook, full pagewidth
DUPLEX CONTROLLER to logic LOG from microphone amplifier from loudspeaker amplifier LOG to logic
TSEN 4 RTSEN CTSEN
TENV 3
TNOI 2
RSEN 6 RRSEN
RENV 7
RNOI 5
CTENV
CTNOI
CRSEN
CRENV
CRNOI
MGM302
Fig.9 Signal and noise envelope detectors.
1999 Apr 08
15
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
TEA1099H
handbook, full pagewidth
4 mV (RMS) 1 mV (RMS)
MBG354
INPUT SIGNAL
SIGNAL ENVELOPE A A: 85 dB/ms B: 0.7 dB/ms 36 mV B A B
NOISE ENVELOPE C B: 0.7 dB/ms C: 0.07 dB/ms 36 mV B C B
time
Fig.10 Signal and noise envelope waveforms.
Decision logic: pins IDT and SWT
handbook, full pagewidth
IDT 25 DUPLEX CONTROLLER Vref 3 TENV 2 TNOI 13 mV
ATTENUATOR
LOGIC(1)
RIDT
SWT 24
CSWT X 7 RENV 5 RNOI 13 mV X 0 X 0 1 0 0 X 0 0 X 1 X 1 X 1 0 0 1 X X -10 A +10 A +10 A
Vdt from logic from dynamic limiter
MGM303
(1) When VDLC < 0.2 V, -10 A is forced.
Fig.11 Decision logic.
1999 Apr 08
16
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
The TEA1099H selects its mode of operation (transmit, receive or Idle mode) by comparing the signal and the noise envelopes of both channels. This is executed by the decision logic. The resulting voltage on pin SWT is the input for the voice switch. To facilitate the distinction between signal and noise, the signal is considered as speech when its envelope is more than 4.3 dB above the noise envelope. At room temperature, this is equal to a voltage difference VENV - VNOI = 13 mV. This so called speech/noise threshold is implemented in both channels. The signal on pin TXIN contains both the speech and the input signal from the loudspeaker (acoustic coupling). When receiving, the contribution from the loudspeaker overrules the speech. As a result, the signal envelope on TENV is formed mainly by the loudspeaker signal. To correct this, an attenuator is connected between TENV and the TENV/RENV comparator. Its attenuation equals that applied to the microphone amplifier. When a dial tone is present on the line, without monitoring, the tone would be recognized as noise because it is a signal with a constant amplitude. This would cause the TEA1099H to go into the Idle mode and the user of the set would hear the dial tone fade away. To prevent this, a dial tone detector is incorporated which, in standard applications, does not consider input signals between HFRX and GND as noise when they have a level greater than 25 mV (RMS). This level is proportional to RRSEN. In the same way, a transmit detector is integrated which, in standard applications, does not consider input signals between TXIN and GNDTX as noise when they have a level greater than 0.75 mV (RMS). This level is proportional to RTSEN. The output of the decision logic is a current source (see Fig.11). The logic table gives the relationship between the inputs and the value of the current source. It can charge or discharge the capacitor CSWT with a current of 10 A (switch-over). If the current is zero, the voltage on SWT becomes equal to the voltage on IDT via the high-ohmic resistor RIDT (idling). The resulting voltage difference between SWT and IDT determines the mode of the TEA1099H and can vary between -400 and +400 mV (see Table 1). The switch-over timing can be set with CSWT, the Idle mode timing with CSWT and RIDT. In the basic application given in Fig.16, CSWT is 220 nF and RIDT is 2.2 M. This enables a switch-over time from transmit to receive mode or vice-versa of approximately 13 ms (580 mV swing on SWT).
TEA1099H
The switch-over time from Idle mode to transmit mode or receive mode is approximately 4 ms (180 mV swing on SWT). The switch-over time, from receive mode or transmit mode to Idle mode is equal to 4 x RIDTCSWT and is approximately 2 seconds (Idle mode time). The input DLC overrules the decision logic. When the voltage on pin DLC goes lower than 0.2 V, the capacitor CSWT is discharged with 10 A thus resulting in the transmit mode. Table 1 Modes of TEA1099H MODE transmit mode Idle mode receive mode
VSWT - VIDT (mV) <-180 0 >180
Voice-switch: pins STAB and SWR
A diagram of the voice-switch is illustrated in Fig.12. With the voltage on SWT, the TEA1099H voice-switch regulates the gains of the transmit and the receive channels so that the sum of both is kept constant. In the transmit mode, the gain of the microphone amplifier is at its maximum and the gain of the loudspeaker amplifier is at its minimum. In the receive mode, the opposite applies. In the Idle mode, both microphone and loudspeaker amplifier gains are halfway. The difference between maximum and minimum is the so called switching range. This range is determined by the ratio of RSWR and RSTAB and is adjustable between 0 and 52 dB. RSTAB should be 3.65 k and sets an internally used reference current. In the basic application diagram given in Fig.16, RSWR is 365 k which results in a switching range of 40 dB. The switch-over behaviour is illustrated in Fig.13. In the receive mode, the gain of the loudspeaker amplifier can be reduced using the volume control. Since the voice switch keeps the sum of the gains constant, the gain of the microphone amplifier is increased at the same time (see dashed curves in Fig.13). In the transmit mode, however, the volume control has no influence on the gain of the microphone amplifier or the gain of the loudspeaker amplifier. Consequently, the switching range is reduced when the volume is reduced. At maximum reduction of volume, the switching range becomes 0 dB.
1999 Apr 08
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Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
TEA1099H
handbook, full pagewidth
DUPLEX CONTROLLER to microphone amplifier
from SWT
Gvtx + Gvrx = C(1) VOICE SWITCH
STAB SWR
21 22
RSTAB RSWR
from volume control
to loudspeaker amplifier
MGM304
(1) C = constant.
Fig.12 Voice switch.
handbook, halfpage
idle mode
MGM305
Tx mode Gvtx, Gvrx (10 dB/div)
Rx mode RVOL () 11400 7600 3800 0 0 3800 7600 11400
Gvtx
Gvrx -400 -200 0 +200 +400
VSWT - VIDT (mV)
Fig.13 Switch-over behaviour.
1999 Apr 08
18
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
Logic inputs Table 2 Selection of transmit and receive channels for 13 different application modes LOGIC INPUTS FEATURES PD 0 0 1 1 1 1 HFC X X 0 0 0 0 MUTT X X 0 0 1 1 MUTR X X 0 1 1 0 AUXC 1 0 0 0 0 1 DTMF to LN; DTMF to RECO; QR and MICS are active MIC to AUXO; RAUX to RECO; QR and MICS are active HFRX to LSAO
TEA1099H
APPLICATION EXAMPLES ringer mode flash, DC dialling DTMF dialling in handset mode cordless intercom with corded handset
MICS to LN; IR to RECO; IR to AUXO handset conversation MIC to TXOUT; QR and MICS are active TXAUX to LN; IR to AUXO conversation using auxiliary I/O such as cordless conversation cordless: HF mode in cordless handset listening on the loudspeaker answering machine: play and record messages; listen to the recorded message on the loudspeaker DTMF dialling in HF/GL modes answering machine: play and record messages while listening on the loudspeaker cordless intercom with base
1 1 1
1 1 1
1 0 0
1 1 0
1 1 1
TXIN to TXOUT; HFTX to LN; IR to RECO; HFRX to AUXO RAUX to RECO; HFRX to LSAO TXAUX to LN; IR to AUXO; RAUX to RECO; HFRX to LSAO
1
1
0
0
0
DTMF to LN; DTMF to RECO; HFRX to LSAO; QR and MICS are active TXAUX to LN; IR to AUXO; IR to RECO; HFRX to LSAO TXIN to TXOUT; HFTX to AUXO; RAUX to RECO; HFRX to LSAO; MICS is active TXIN to TXOUT; HFTX to LN; IR to RECO; IR to AUXO; HFRX to LSAO; MICS is active MIC to LN; IR to RECO; IR to AUXO; HFRX to LSAO; MIC to TXOUT; QR; MICS is active
1
1
1
0
1
1
1
0
1
0
1
1
1
1
0
HF conversation mode
1
1
1
0
0
handset conversation with group-listening
1999 Apr 08
19
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
TEA1099H
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); all DC levels are referenced to GND. SYMBOL VLN PARAMETER positive continuous line voltage repetitive line voltage during switch-on or line interruption VESI Ii(ESI) Vn(max) positive continuous voltage on pin ESI input current at pin ESI maximum voltage on pins REG, SLPE, IR and AGC on all other pins except VDD Iline(max) Ptot Tstg Tamb maximum line current total power dissipation IC storage temperature operating ambient temperature Tamb = 75 C -0.4 -0.4 - - -40 -25 VLN + 0.4 VBB + 0.4 140 720 +125 +75 V V mA mW C C CONDITIONS MIN. -0.4 -0.4 -0.4 - MAX. +12 +13.2 +6 140 V V V mA UNIT
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air VALUE 63 UNIT K/W
1999 Apr 08
20
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
TEA1099H
handbook, full pagewidth
160
FCA029
Iline (mA) 120
(1) (2)
(3)
(4)
80
(5)
40
0 3 4 5 6 7 8 9 10 11 VSLPE (V) 12
LINE (1) (2) (3) (4) (5) Fig.14 Safe operating area.
Tamb (C) 35 45 55 65 75
Ptot (mW) 1304 1158 1012 866 720
1999 Apr 08
21
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
TEA1099H
CHARACTERISTICS Iline = 15 mA; RSLPE = 20 ; Zline = 600 ; f = 1 kHz; Tamb = 25 C; AGC pin connected to LN; PD = HIGH; HFC = LOW; AUXC = LOW; MUTT = HIGH; MUTR = HIGH; measured according to test circuits; all DC levels are referenced to GND; unless otherwise specified. SYMBOL Supplies LINE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE, REG AND VBB) VSLPE VBB Iline VSLPE(T) VBB(T) IBB VLN stabilized voltage between SLPE and GND (Vref) regulated supply voltage for internal circuitry line current for voltage increase stabilized voltage variation with temperature referenced to 25 C regulated voltage variation with temperature referenced to 25 C current available on pin VBB line voltage Iline = 15 mA Iline = 70 mA Iline = 15 mA Iline = 70 mA start current stop current Tamb = -25 to +75 C Tamb = -25 to +75 C speech mode handsfree mode Iline = 1 mA Iline = 4 mA Iline = 15 mA Iline = 140 mA EXTERNAL SUPPLY (PIN ESI) VESI external voltage supply allowed on pin ESI voltage on pin ESI when supplied by a current source Ii(ESI) IESI(ext) input current on pin ESI external current supply allowed on pin ESI IESI = 140 mA except in Power-down mode VESI = 3.5 V - - - - - 6.6 3.1 - 6 - - 140 V V mA mA 3.4 5.7 2.75 4.9 - - - - - - - - 3.7 - 3.7 6.1 3.0 5.3 18 45 60 30 11 9 1.55 2.35 4.0 8.9 4 6.5 3.25 5.7 - - - - - - - - 4.3 9.5 V V V V mA mA mV mV mA mA V V V V PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
SUPPLY FOR PERIPHERALS (PIN VDD) VDD regulated supply voltage on VDD VBB > 3.35 V + 0.25 V (typ.) otherwise VDD(T) regulated voltage variation with temperature referenced to 25 C current consumption on VDD (capacitor disconnected) Tamb = -25 to + 75 C; VBB > 3.35 V + 0.25 V (typ.) in trickle mode; Iline = 0 mA; VDD = 1.5 V; VBB discharging VDD > 3.35 V IDD(o) 1999 Apr 08 current available for peripherals VDD = 3.35 V 22 3.1 - - 3.35 3.6 V V mV
VBB - 0.25 - 30 -
IDD
-
15
150
nA
60 -
100 -
- -3
A mA
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
SYMBOL PARAMETER CONDITIONS MIN. - - -0.4 1.8 - PD = LOW; AUXC = LOW - TYP.
TEA1099H
MAX. - -1 0.3 VBB + 0.4 -6 -
UNIT
SUPPLY FOR MICROPHONE (PIN MICS) VMICS IMICS VIL VIH Ii(pd) IBB(pd) supply voltage for a microphone current available on MICS IMICS = 0 mA 2.0 - - - -3 460 V mA
POWER-DOWN INPUT (PIN PD) LOW-level input voltage HIGH-level input voltage input current current consumption on VBB during power-down phase V V A A
RINGER MODE (PINS PD, AUXC, HFRX AND LSAO) Ii(ESI) input current on pin ESI PD = LOW; AUXC = HIGH; VESI = 3.5 V PD = LOW; AUXC = HIGH; VESI = 3.5 V; VHFRX = 20 mV (RMS); RGALS = 255 k - 3.1 - mA
Gv(HFRX-LSAO)
voltage gain from pin HFRX to LSAO
-
28
-
dB
Preamplifier inputs (pins MIC+, MIC-, IR, DTMF, TXIN, HFTX, HFRX, TXAUX and RAUX) Zi(MIC) input impedance differential between pins MIC+ and MIC- single-ended between pins MIC+/MIC- and GNDTX Zi(IR) Zi(DTMF) Zi(TXIN) Zi(HFTX) Zi(HFRX) Zi(TXAUX) Zi(RAUX) input impedance between pins IR and LN input impedance between pins DTMF and GND input impedance between pins TXIN and GNDTX input impedance between pins HFTX and GND input impedance between pins HFRX and GND input impedance between pins TXAUX and GND input impedance between pins RAUX and GND - - - - - - - - - 70 35 20 20 20 20 20 20 20 - - - - - - - - - k k k k k k k k k
1999 Apr 08
23
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
SYMBOL TX amplifiers TX HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC- AND LN); note 1 Gv(MIC-LN) Gv(f) Gv(T) CMRR THD voltage gain from pin MIC+/MIC- to LN gain variation with frequency referenced to 1 kHz gain variation with temperature referenced to 25 C common mode rejection ratio total harmonic distortion at LN VLN = 1.4 V (RMS) Iline = 4 mA; VLN = 0.12 V (RMS) Vno(LN) noise output voltage at pin LN; pins MIC+/MIC- shorted through 200 gain reduction if not activated psophometrically weighted (p53 curve) HFC = LOW; MUTT = LOW; MUTR = LOW; AUXC = LOW; VMIC = 5 mV (RMS) f = 300 to 3400 Hz Tamb = -25 to +75 C 43.3 - - - - - - 44.3 0.25 0.25 80 - - -77.5 PARAMETER CONDITIONS MIN. TYP.
TEA1099H
MAX.
UNIT
45.3 - - - 2 10 -
dB dB dB dB % % dBmp
Gv(mute)
60
80
-
dB
DTMF AMPLIFIER (PINS DTMF, LN AND RECO); note 1 Gv(DTMF-LN) Gv(f) Gv(T) Gv(mute) voltage gain from pin DTMF to LN VDTMF = 50 mV (RMS) gain variation with frequency referenced to 1 kHz gain variation with temperature referenced to 25 C gain reduction if not activated f = 300 to 3400 Hz Tamb = -25 to +75 C HFC = LOW; MUTT = HIGH; MUTR = HIGH; AUXC = LOW VDTMF = 50 mV (RMS) 24.35 25.35 - - 60 0.25 0.25 80 26.35 - - - dB dB dB dB
Gv(DTMF-RECO)
voltage gain from pin DTMF to RECO
-
-16.5
-
dB
TX AUXILIARY AMPLIFIER USING TXAUX (PINS TXAUX AND LN); note 1 Gv(TXAUX-LN) Gv(f) Gv(T) THD VTXAUX(rms) Vno(LN) voltage gain from pin TXAUX to LN gain variation with frequency referenced to 1 kHz gain variation with temperature referenced to 25 C total harmonic distortion at LN VTXAUX = 0.1 V (RMS) f = 300 to 3400 Hz Tamb = -25 to +75 C VLN = 1.4 V (RMS) 11.5 - - - - - 12.5 0.25 0.25 - 1.2 -80.5 13.5 - - 2 - - dB dB dB % V dBmp
maximum input voltage at TXAUX Iline = 70 mA; THD = 2% (RMS value) noise output voltage at pin LN; pin psophometrically TXAUX shorted to GND through weighted (p53 curve) 200 in series with 10 F 24
1999 Apr 08
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
SYMBOL Gv(mute) PARAMETER gain reduction if not activated CONDITIONS HFC = LOW; MUTT = LOW; MUTR = LOW; AUXC = LOW MIN. 60 80 TYP.
TEA1099H
MAX. -
UNIT dB
TX AMPLIFIER USING HFTX (PINS HFTX AND LN); note 1 Gv(HFTX-LN) Gv(f) Gv(T) THD VHFTX(rms) Vno(LN) voltage gain from pin HFTX to LN VHFTX = 15 mV (RMS) gain variation with frequency referenced to 1 kHz gain variation with temperature referenced to 25 C total harmonic distortion at LN maximum input voltage at HFTX (RMS value) f = 300 to 3400 Hz Tamb = -25 to +75 C VLN = 1.4 V (RMS) Iline = 70 mA; THD = 2% 33.5 - - - - - 34.7 0.25 0.25 - 95 -77.5 35.9 - - 2 - - dB dB dB % mV dBmp
noise output voltage at pin LN; pin psophometrically HFTX shorted to GND through weighted (p53 curve) 200 in series with 10 F gain reduction if not activated HFC = LOW; MUTT = HIGH; MUTR = LOW; AUXC = HIGH
Gv(mute)
60
80
-
dB
MICROPHONE MONITORING ON TXOUT (PINS MIC+, MIC- AND TXOUT); note 1 Gv(MIC-TXOUT) Gv(f) Gv(T) RX amplifiers RX AMPLIFIERS USING IR (PINS IR AND RECO); note 1 Gv(IR-RECO) Gv(f) Gv(T) VIR(rms)(max) voltage gain from pin IR (referenced to LN) to RECO gain variation with frequency referenced to 1 kHz gain variation with temperature referenced to 25 C maximum input voltage on IR (referenced to LN) (RMS value) VIR = 15 mV (RMS) f = 30 to 3400 Hz Tamb = -25 to +75 C Iline = 70 mA; THD = 2% THD = 2% 28.7 - - - 0.75 - 29.7 0.25 0.3 50 0.9 -88 30.7 - - - - - dB dB dB mV V dBVp voltage gain from pin MIC+/MIC- to TXOUT gain variation with frequency referenced to 1 kHz gain variation with temperature referenced to 25 C VMIC = 2 mV (RMS) f = 300 to 3400 Hz Tamb = -25 to +75 C 48.3 - - 49.8 0.1 0.35 51.3 - - dB dB dB
VRECO(rms)(max) maximum output voltage on RECO (RMS value) Vno(RECO)(rms)
noise output voltage at pin RECO; psophometrically pin IR is an open circuit weighted (p53 curve) (RMS value)
1999 Apr 08
25
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
SYMBOL Gv(mute) PARAMETER gain reduction if not activated CONDITIONS HFC = LOW; MUTT = LOW; MUTR = LOW; AUXC = LOW MIN. 60 80 TYP.
TEA1099H
MAX. -
UNIT dB
RX EARPIECE AMPLIFIER (PINS GARX AND QR); note 1 Gv(RECO-QR) VQR(rms)(max) Vno(QR)(rms) gain voltage range between pins RECO and QR maximum output voltage on QR (RMS value) noise output voltage at pin QR; pin IR is an open-circuit (RMS value) sine wave drive; RL = 150 ; THD < 2% Gv(QR) = 0 dB; psophometrically weighted (p53 curve) -3 0.75 - - 0.9 -88 +15 - - dB V dBVp
RX AMPLIFIER USING RAUX (PINS RAUX AND RECO); note 1 Gv(RAUX-RECO) Gv(f) Gv(T) VRAUX(rms) Vno(RECO)(rms) voltage gain from pin RAUX to RECO gain variation with frequency referenced to 1 kHz gain variation with temperature referenced to 25 C maximum input voltage on RAUX (RMS value) VRAUX = 0.4 V (RMS) f = 300 to 3400 Hz Tamb = -25 to +75 C THD = 2% -3.7 - - - - -2.4 0.25 0.25 0.95 -100 -1.1 - - - - dB dB dB V dBVp
noise output voltage at pin RECO; psophometrically pin RAUX shorted to GND weighted (p53 curve) through 200 in series with 10 F (RMS value) gain reduction if not activated HFC = LOW; MUTT = LOW; MUTR = LOW; AUXC = LOW
Gv(mute)
60
80
-
dB
Auxiliary amplifiers using AUXO TX AUXILIARY AMPLIFIER USING MIC+ AND MIC- (PINS MIC+, MIC- AND AUXO); note 1 Gv(MIC-AUXO) Gv(f) Gv(T) VMIC(rms) Vno(AUXO) voltage gain from pin MIC+/MIC- to AUXO gain variation with frequency referenced to 1 kHz gain variation with temperature referenced to 25C maximum input voltage on MIC+/MIC- (RMS value) VMIC = 10 mV (RMS) f = 300 to 3400 Hz Tamb = -25 to +75 C THD = 2% 24.2 - - - - 25.5 0.1 0.3 16 -91 26.8 - - - - dB dB dB mV dBVp
noise output voltage at pin AUXO; psophometrically pins MIC+/MIC- shorted to weighted (p53 curve) GNDTX through 200 in series with 10 F (RMS value)
1999 Apr 08
26
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
SYMBOL PARAMETER CONDITIONS MIN. TYP.
TEA1099H
MAX.
UNIT
TX AUXILIARY AMPLIFIER USING HFTX (PINS HFTX AND AUXO); note 1 Gv(HFTX-AUXO) Gv(f) Gv(T) VAUXO(rms) Vno(AUXO)(rms) voltage gain from pin HFTX to AUXO gain variation with frequency referenced to 1 kHz gain variation with temperature referenced to 25 C maximum output voltage on AUXO (RMS value) VHFTX = 100 mV (RMS) f = 300 to 3400 Hz Tamb = -25 to +75 C THD = 2% 14.2 - - 0.8 - 15.2 0.1 0.1 0.9 -91.5 16.2 - - - - dB dB dB V dBVp
noise output voltage at pin AUXO; psophometrically pin HFTX shorted to GND through weighted (p53 curve) 200 in series with 10 F (RMS value) gain reduction if not activated HFC = LOW; MUTT = LOW; MUTR = HIGH; AUXC = LOW
Gv(mute)
60
80
-
dB
RX AMPLIFIER USING IR (PINS IR AND AUXO); note 1 Gv(IR-AUXO) Gv(f) Gv(T) VAUXO(rms) Vno(AUXO)(rms) voltage gain from pin IR (referred to LN) to AUXO gain variation with frequency referenced to 1 kHz gain variation with temperature referenced to 25 C maximum output voltage on AUXO (RMS value) VIR = 3 mV (RMS) f = 300 to 3400 Hz Tamb = -25 to +75 C THD = 2% 31.6 - - 0.8 - 32.8 0.1 0.3 0.9 -85 34 - - - - dB dB dB V dBVp
noise output voltage at pin AUXO; psophometrically pin IR is an open circuit (RMS weighted (p53 curve) value) gain reduction if not activated HFC = HIGH; MUTT = LOW; MUTR = HIGH; AUXC = HIGH
Gv(mute)
60
80
-
dB
Automatic Gain Control (pin AGC) Gv(trx) gain control range for transmit and receive amplifiers affected by the AGC; with respect to Iline = 15 mA Iline = 70 mA; on Gv(MIC-LN), Gv(IR-RECO) and Gv(IR-AUXO) Iline = 70 mA for other transmit and receive gains affected 5.45 6.45 7.45 dB
5.8
6.8
7.8
Istart Istop
highest line current for maximum gain lowest line current for maximum gain
- -
23 57
- -
mA mA
1999 Apr 08
27
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
SYMBOL PARAMETER CONDITIONS MIN. -0.4 1.8 VBB = 3 V - - 3 -2.5 - - TYP.
TEA1099H
MAX.
UNIT
Logic inputs (pins HFC, AUXC, MUTT and MUTR) VIL VIH I LOW-level input voltage HIGH-level input voltage input current for pins HFC and AUXC for pins MUTT and MUTR Handsfree HF MICROPHONE AMPLIFIER (PINS TXIN, TXOUT AND GATX); note 1 Gv(TXIN-TXOUT) Gv Gv(f) Gv(T) voltage gain from pin TXIN to TXOUT voltage gain adjustment with RGATX gain variation with frequency referenced to 1 kHz gain variation with temperature referenced to 25 C f = 300 to 3400 Hz Tamb = -25 to +75 C psophometrically weighted (p53 curve) VTXIN = 8 mV (RMS); RGATX = 30.1 k 12.7 -15 - - - 15.2 - 0.1 0.15 -101 17.7 +16 - - - dB dB dB dB dBmp 0.3 VBB + 0.4 6 -6 V V A A
Vno(TXOUT)(rms) noise output voltage at pin TXOUT; pin TXIN is shorted through 200 in series with 10 F to GNDTX (RMS value) Gv(mute) gain reduction if not activated
HFC = HIGH; MUTT = LOW; MUTR = LOW; AUXC = LOW
60
80
-
dB
HF LOUDSPEAKER AMPLIFIER (PINS HFRX, LSAO, GALS AND VOL); note 1 Gv(HFRX-LSAO) Gv Gv(f) Gv(T) Gv(vol) voltage gain from pin HFRX to LSAO voltage gain adjustment with RGALS gain variation with frequency referenced to 1 kHz gain variation with temperature referenced to 25 C voltage gain variation related to RVOL = 1.9 k f = 300 to 3400 Hz Tamb = -25 to +75 C when total attenuation does not exceed the switching range Iline = 70 mA RGALS = 33 k; for 2% THD in the input stage VHFRX = 20 mV (RMS); RGALS = 255 k 25.5 -28 - - - 28 - 0.3 0.3 -3 30.5 +7 - - - dB dB dB dB dB
VHFRX(rms)(max) maximum input voltage at pin HFRX (RMS value) Vno(LSAO)(rms)
-
580
-
mV
noise output voltage at pin LSAO; psophometrically pin HFRX is open circuit weighted (p53 curve) (RMS value)
-
-79
-
dBVp
1999 Apr 08
28
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
SYMBOL VLSAO(rms) PARAMETER CONDITIONS MIN. - - - 150 HFC = HIGH; MUTT = HIGH; MUTR = HIGH; AUXC = HIGH 60 TYP. 0.9 1.3 1.6 300 80
TEA1099H
MAX. - - - - -
UNIT V V V mA dB
output voltage (RMS value) IBB = 0 mA; IDD = 1 mA without external supply on pin ESI Iline = 18 mA Iline = 30 mA Iline > 50 mA
ILSAO(max) Gv(mute)
maximum output current at pin LSAO (peak value) gain reduction if not activated
DYNAMIC LIMITER (PINS LSAO AND DLC) tatt attack time when VHFRX jumps from 20 mV to 20 mV + 10 dB when VBB jumps below VBB(th) trel THD VBB(th) VDLC(th) release time total harmonic distortion at VHFRX = 20 mV + 10 dB VBB limiter threshold threshold voltage required on pin DLC to obtain mute receive condition threshold current sourced by pin DLC in mute receive condition voltage gain reduction in mute receive condition VDLC = 0.2 V VDLC = 0.2 V when VHFRX jumps from 20 mV + 10 dB to 20 mV t > tatt - - - - - -0.4 - 1 100 0.1 2.7 - 5 - - 2 - +0.2 ms ms ms % V
MUTE LOUDSPEAKER (PIN DLC) V
IDLC(th) Gvrx(mute)
- 60
100 80
- -
A dB
RX AMPLIFIER USING HFRX (PINS HFRX AND AUXO); note 1 Gv(HFRX-AUXO) Gv(f) Gv(T) VHFRX(rms) Vno(AUXO)(rms) voltage gain from pin HFRX to AUXO gain variation with frequency referenced to 1 kHz gain variation with temperature referenced to 25 C maximum input voltage at pin HFRX (RMS value) VHFRX = 0.25 V (RMS) f = 300 to 3400 Hz Tamb = -25 to +75 C 1.2 - - 3.7 0.1 0.4 580 -100 6.2 - - - - dB dB dB mV dBVp
Iline = 70 mA; for 2% THD - in the input stage -
noise output voltage at pin AUXO; psophometrically pin HFRX is an open-circuit weighted (p53 curve) (RMS value) gain reduction if not activated HFC = LOW; MUTT = LOW; MUTR = HIGH; AUXC = LOW
Gv(mute)
60
80
-
dB
1999 Apr 08
29
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
SYMBOL PARAMETER CONDITIONS MIN. TYP.
TEA1099H
MAX.
UNIT
TX AND RX ENVELOPE AND NOISE DETECTORS (PINS TSEN, TENV, TNOI, RSEN, RENV AND RNOI)
Preamplifiers
Gv(TSEN) Gv(RSEN) voltage gain from pin TXIN to TSEN voltage gain from pin HFRX to RSEN sensitivity detection on pin TSEN; ITSEN = 0.8 to 160 A voltage change on pin TENV when doubling the current from TSEN sensitivity detection on pin RSEN; IRSEN = 0.8 to 160 A voltage change on pin RENV when doubling the current from RSEN - - 40 0 - - dB dB
Logarithmic compressor and sensitivity adjustment
Vdet(TSEN) - 18 - mV
Vdet(RSEN)
-
18
-
mV
Signal envelope detectors
Isource(ENV) Isink(ENV) VENV maximum current sourced from pin TENV or RENV maximum current sunk by pin TENV or RENV voltage difference between pins RENV and TENV when 10 A is sourced from both RSEN and TSEN; signal detectors tracking; note 2 - 120 - -0.75 - A A mV
-1.25 -1 - 3
Noise envelope detectors
Isource(NOI) Isink(NOI) VNOI maximum current sourced from pin TNOI or RNOI maximum current sunk by pin TNOI or RNOI voltage difference between pins RNOI and TNOI dial tone detector or TX level limiter not activated when 5 A is sourced from both RSEN and TSEN; noise detectors tracking; note 2 0.75 - - 1 -120 3 1.25 - - A A mV
DIAL TONE DETECTOR VHFRX(th)(rms) threshold level at pin HFRX (RMS value) RRSEN = 10 k - 25 - mV
TX LEVEL LIMITER VTXIN(th)(rms) threshold level at pin TXIN (RMS value) RTSEN = 10 k - 0.75 - mV
1999 Apr 08
30
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
SYMBOL PARAMETER CONDITIONS MIN. TYP.
TEA1099H
MAX.
UNIT
DECISION LOGIC (PINS IDT AND SWT)
Signal recognition
VSrx(th) threshold voltage between pins RENV and RNOI to switch-over from receive to Idle mode threshold voltage between pins TENV and TNOI to switch-over from transmit to Idle mode VHFRX < VHFRX(th); note 3 - 13 - mV
VStx(th)
VTXIN < VTXIN(th); note 3
-
13
-
mV
Switch-over
Isource(SWT) Isink(SWT) Iidle(SWT) current sourced from pin SWT when switching to receive mode current sunk by pin SWT when switching to transmit mode current sourced from pin SWT in Idle mode 7.5 10.0 12.5 -7.5 - A A A
-12.5 -10.0 - 0
VOICE SWITCH (PINS STAB AND SWR) SWRA SWRA |Gv| switching range switching range adjustment voltage gain variation from transmit or receive mode to Idle mode gain tracking (Gvtx + Gvrx) during switching, referenced to Idle mode with RSWR referenced to 365 k - -40 - 40 - 20 - +12 - dB dB dB
Gtrx
-
0.5
-
dB
Notes 1. When the channel is enabled according to Table 2. 2. Corresponds to 1 dB tracking. 3. Corresponds to 4.3 dB noise/speech recognition level.
1999 Apr 08
31
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Zexch 600 i = 15 mA J_line Dz Vd = 10 V Cexch Cemc 10 nF Cimp 100 F CIR 100 nF CMICS 4.7 F IR Zimp 620 VIR RSLPE 20 CREG 4.7 F REG 16 SLPE 14 100 F 17 18 MICS MIC+ VMIC+ RMIC 200 MIC- CHFTX 100 nF TXOUT 35 26 HFTX 30 36 RECO 20 31
Philips Semiconductors
AGC 15
handbook, full pagewidth
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
external supply or current supply
DESI LN 9 ESI 10
CVBB 470 F VBB
CVDD 47 F VDD 19 38 37 39 40 41 33 PD HFC MUTT MUTR AUXC QR CGAR 100 pF Re2 100 k CGARS 1 nF CRXE 100 nF CHFRX 100 nF RQR 150 Cqr 4.7 F
34
GARX
Re1 100 k
32
VHFTX
RGATX 30.1 k CTXIN 100 nF VTXIN CDTMF 100 nF VDTMF CTXAUX 100 nF VTXAUX VRAUX CRAUX 100 nF TSEN TENV RTSEN 10 k TNOI 4 5 3 2 13 GND 25 RAUX 42 7 TXAUX 43 6 DTMF 32 12 GATX TXIN
TEA1099H
27 28
1
HFRX
VHFRX
11
GALS RGALS 255 k CGALS 150 pF
LSAO
RSEN
RENV CLSAO 220 F RNOI
IDT RIDT 2.2 M CRNOI 4.7 F RRSEN 10 k RLSAO 50 CRSEN 100 nF
FCA021
29
21
22 SWR RSWR 365 k
23 VOL RVOL 0 to 22 k
8 DLC
24
Product specification
GNDTX STAB RSTAB 3.65 k
SWT
TEA1099H
CTSEN 100 nF
CTENV 470 nF
CTNOI 4.7 F
CDLC 470 nF
CSWT 220 nF
CRENV 470 nF
Fig.15 Test circuit.
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
APPLICATION INFORMATION
TEA1099H
handbook, full pagewidth
Rbal2 820 Rbal1 130 Cbal 220 nF RSLPE 20 Rast3 392 Rast2 3.92 k Cimp 22 F Rast1 130 k D2 D3 CIR 100 nF IR 17 38 37 41 39 MICS RMICP 1 k Ctx2 Rtx2 MICS CMICS 4.7 F MIC+ 20 40 SLPE 14 REG 16 AGC 18 15 Zimp 620 Dz Vd 10 V Cemc 10 nF CREG 4.7 F DESI LN 9 ESI CVBB 470 F VBB 10 CVDD 47 F VDD 19 PD HFC AUXC MUTT MUTR from controller external supply
31 44 30 33
handset microphone
CMICH 22 nF 33 nF Ctx1 22 nF RMICM 1 k
15 k R tx3 Rtx1 8.2 k 15 k MIC-
AUXO QR
CAUXO 100 nF CGAR 100 pF Re1 100 k CRXE Re2 100 k CGARS 1 nF CQR 10 F
CHFTX A from MICS RBMICS 2 k handsfree microphone CMICB 22 nF CTXIN 100 nF CDTMF CTXAUX 100 nF 100 nF C RAUX 100 nF D1 D4
34 HFTX 36 26
GARX
100 nF TXOUT RGATX 30.1 k
TEA1099H
GATX 35 27 1 28
B
RECO
100 nF CHFRX
HFRX
100 nF
TXIN
DTMF TXAUX RAUX
11 32 43 42 12
GALS RGALS LSAO 255 k CGALS 150 pF CLSAO 220 F
TSEN TENV TNOI RTSEN 10 k
4 3 2
6 7 5 25 13 GND 29 21 22 SWR RSWR 365 k 23 VOL RVOL 0 to 22 k 8 DLC CDLC 470 nF 24 SWT
RSEN RENV RNOI IDT RIDT 2.2 M CRNOI 4.7 F CRENV 470 nF CRSEN 100 nF
MGM306
RRSEN 10 k
GNDTX STAB RSTAB 3.65 k
CTSEN 100 nF
CTENV 470 nF
CTNOI 4.7 F
CSWT 220 nF
Fig.16 Basic application diagram.
1999 Apr 08
33
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
PACKAGE OUTLINE QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm
TEA1099H
SOT307-2
c
y X
A 33 34 23 22 ZE
e E HE wM bp pin 1 index 44 1 bp D HD wM 11 ZD B vM B vMA 12 detail X A A2 (A 3) Lp L
A1
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 2.10 A1 0.25 0.05 A2 1.85 1.65 A3 0.25 bp 0.40 0.20 c 0.25 0.14 D (1) 10.1 9.9 E (1) 10.1 9.9 e 0.8 HD 12.9 12.3 HE 12.9 12.3 L 1.3 Lp 0.95 0.55 v 0.15 w 0.15 y 0.1 Z D (1) Z E (1) 1.2 0.8 1.2 0.8 10 0o
o
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT307-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-02-04 97-08-01
1999 Apr 08
34
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 230 C. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed.
TEA1099H
If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1999 Apr 08
35
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE WAVE BGA, SQFP PLCC(3), SO, SOJ not suitable suitable(2) suitable not recommended(3)(4) not recommended(5) suitable suitable suitable suitable suitable HLQFP, HSQFP, HSOP, HTSSOP, SMS not LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes
TEA1099H
REFLOW(1)
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1999 Apr 08
36
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
NOTES
TEA1099H
1999 Apr 08
37
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
NOTES
TEA1099H
1999 Apr 08
38
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary inputs/outputs and analog multiplexer
NOTES
TEA1099H
1999 Apr 08
39
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
465002/750/03/pp40
Date of release: 1999 Apr 08
Document order number:
9397 750 04985

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